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Education
- Postdoc, Stanford University, 2019-2024
- Ph.D., University at Buffalo – SUNY, 2019
- M.S., University at Buffalo – SUNY, 2015
- B.Eng., Communication University of Zhejiang, Hangzhou, China, 2013
Research Areas
- (Ultra) Wide-Bandgap Semiconductor Devices
- Gallium Oxide, Gallium Nitride
- Power MOSFETs and Diodes
- Energy Efficient Microelectronics
Published Papers
- K. Zeng, A. Vaidya, and U. Singisetti, “1.85 kV Breakdown Voltage in Lateral Field-Plated GA203 MOSFETs,” IEEE Electron Device Lett., vol. 39, no. 9, pp. 1385-1388, 2018.
- S. Sharma, K. Zeng, S. Saha, and U. Singisetti, “Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 41,. no. 6, pp. 836-839, 2020. DOI: 10.1109/LED.2020.2991146
- K. Zeng, J. S. Wallace, C. Heimburger, K. Sasaki, A. Kuramata, J. A. G. Jr, and U. Singisetti, “Ga2O3 MOSFETs using Spin-on-Glass Source/Drain Doping Technology,” IEEE Electron Device Lett., vol. 38, no. 4, pp. 5–8, 2017. doi: 10.1109/LED.2017.2675544
- Z. Bian, K. Zeng, and S. Chowdhury, “2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer,” IEEE Electron Device Lett., vol. 43,. no. 4, pp. 596-599, 2022. DOI: 10.1109/LED.2022.3149748
- K. Zeng, R. Soman, Z. Bian, S. Jeong, and S. Chowdhury, “Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer,” IEEE Electron Device Lett., vol. 43, no. 9, pp. 1527–1530, Sep. 2022. DOI: 10.1109/LED.2022.3196035
